Robert H. Dennard, the Engineer Behind Silicon Memory Technology, Dies at 91
Robert H. Dennard, the engineer credited with inventing the silicon memory technology that is essential to every smartphone, laptop, and tablet computer, passed away on April 23 in Sleepy Hollow, N.Y. He was 91 years old.
His daughter, Holly Dennard, revealed that the cause of his death was a bacterial infection.
Mr. Dennard’s groundbreaking work began at IBM in the 1960s when computer data storage equipment was bulky, expensive, and slow. He revolutionized the field of microelectronics by developing dynamic random-access memory (DRAM) in 1966, allowing for the storage of one digital bit on one transistor. This technology paved the way for significant advancements in data capacity, speed, and cost efficiency using tiny silicon chips.
DRAM has since become the foundation of modern computing, enabling high-speed, high-capacity memory chips that are crucial for various applications, from streaming videos to using artificial intelligence chatbots.
In addition to his work on DRAM, Mr. Dennard also introduced the concept of Dennard scaling, which outlined how transistors could shrink in size and become more powerful and cost-effective while maintaining consistent energy consumption. This principle has had a lasting impact on chip development and has influenced the advancement of microelectronics.
Throughout his career, Mr. Dennard accumulated 75 patents and received prestigious awards, including the National Medal of Technology from President Ronald Reagan in 1988 and the Kyoto Prize in advanced technology in 2019.
In a 2009 interview, Mr. Dennard emphasized the importance of perseverance and hard work in the field of science and technology, highlighting that breakthroughs require real people to make them happen.
His legacy as a pioneer in the world of microelectronics will continue to shape the future of technology and inspire generations of innovators to come.
